Integra Announces New GaN-on-SiC Products
Ready to Sample Wideband 2.7-3.5GHz S-band GaN-on-SiC Devices.

Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, today announced the development of High Voltage Gallium Nitride on Silicon Carbide (GaN on SiC) technology.

“GaN technology’s inherent low capacitances enable broadband designs that cover both commercial and military Air Traffic Control (ATC) radar bands simultaneously. These new products demonstrate Integra management’s commitment to providing innovative devices to our customers.” says John Titizian, Integra’s founder and president, describing the development effort. “We have years of RF expertise manufacturing high power semiconductors and with our low overhead cost structure we will continue to dominate in both price and performance.”