Integra Unveils Novel 100V RF GaN-on-SiC Technology
with Superior Performance

Modernization of multi-kilowatt RF communication and data transmission systems is pushing the requirements of what traditional vacuum electron devices and solid state semiconductor technology can deliver. Thanks to the pioneering work of our team at Integra, we have achieved a breakthrough raising the bar for GaN-on-SiC technology, by propelling the operating voltage for this class of device to a new high of 100V. The ground-breaking progress that we have made enables 100V GaN/SiC-based HEMTs to offer a superior solution for avionics, radar systems, high-energy particle accelerators, and other applications requiring high output power, wide operating bandwidth and high efficiency. Read our full press release.

 

Superior Performance of Integra's 100V RF GaN Transistors

High Power Density 

Leveraging our proprietary epitaxial structure, Integra's HV GaN transistors can achieve power densities over
20 Watts/mm. The high power density enables customers to reduce transistor count and its power combining circuity, and system size and costs.

High Drain Efficiency 

An industry first, Integra has developed a single RF transistor achieving 3.6 kW (>20 W/mm pulsed) with >70% drain efficiency at 100 V. Impedance matching for high efficiency is accomplished through a  combination of lumped and distributed matching elements.

Thermally Enhanced

In addition, to our novel and unique epitaxial structure, we incorporate patented circuit and thermal management techniques to reduce the effective thermal resistance of our transistor products by up to 10%.

Integra’s 100V GaN gives designers the ability to dramatically increase system power levels and functionality while simplifying system architectures with less power combining circuitry compared to the more commonplace 50V and 65V GaN technology.  Customers ultimately benefit with a smaller system footprint and lower system cost. 

New Product: IGN1011S3600

Integra's first 100V RF GaN-on-SiC product, the IGN1011S3600 delivers breakthrough performance achieving 3.6 kiloWatt of output power and 70% drain efficiency. Designed specifically for IFF/SSR avionic systems, the IGN1011S3600 is a compelling solution that addresses the size, weight, power and cost (SWAP-C) improvement needs over existing market solutions.

Download Integra's IGN1011S3600 datasheet.

 
 

Want to learn more?

If you're looking to learn more or request a product sample of our 100V RF GaN-on-SiC technology, contact us by filling out the form below. 

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