IGN2631M1400 and IGN2631M1400S are high power GaN-on- SiC RF power transistors. They operate over 2.6 - 3.1 GHz. Under 100μs, 1% duty cycle pulse conditions they supply a minimum of 1400 W of peak output power, with typically 13.5 dB of associated gain and 55% efficiency. They operate from a 100 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.