Fully-matched (50-Ohm), GaN-on-SiC and LDMOS RF Power Transistors for S-, C-, and X-band Radar Systems
One level up from our pre-matched transistors, Integra offers a suite of space-saving and easy-to-implement fully matched (50-ohm) transistors. These ultra-efficient transistors enable you to achieve SWaP-C objectives by getting more functional use out of the transistor spot in your high power amplifier's (HPA's) block diagram. These solid-state RF Power Transistors are currently designed for RF and microwave applications from 2.7 GHz to 12 GHz (S-band, C-band, X-band) and offer output power up to 135 W. They are designed with thermally-efficient metallized packages, and provide efficiencies up to 55%. They are the ideal RF Power Transistors for advance pulsed radar design applications.
Model
Min Freq
(GHz)
Max Freq
(GHz)
Min Output
Power (W)
Typical
Gain
(dB)
Typical
Efficiency
(%)
Pulse Width
& Duty Factor
Voltage
(V)
Matching
Package
Compare
(Ohm)
IGT1011S400
1.03
1.09
400
18
50
10µs, 4%
60
50
PM67A1
IGT1011S150
1.03
1.09
150
37
45
32µs, 4%
50
50
PFC77A1
IGT5259CW25
5.2
5.9
25
12
45
CW
36
50
PL44C2
IGT2731M130
2.7
3.1
130
16
62
300µs, 10%
50
50
PL44A1
ILT2731M130
2.7
3.1
130
12
43
300µs, 10%
32
50
P64H2
ILT2731M15
2.7
3.1
15
12
50
300µs, 10%
32
50
PL32A2
ILT2731M30
2.7
3.1
30
12
50
300µs, 10%
32
50
PL32A2
ILT3035M15
3
3.5
15
12
45
300µs, 10%
32
50
PL32A2
ILT3035M30
3
3.5
30
12
45
300µs, 10%
32
50
PL32A2
IGT3135M135
3.1
3.5
135
13.5
55
300µs, 10%
46
50
PL44A1
IGT5259CW50
5.2
5.9
50
13
50
CW
28
50
PL44C2
IGT5459M25
5.4
5.9
25
15
43
50µs, 10%
45
50
PL44A1
IGT8292M50
8.2
9.2
50
12
45
100µs, 10%
50
50
PFC77B1
IGT8994M50
8.9
9.4
50
12
43
200µs, 10%
50
50
PFC77B1
IGT1011S400
400
Watts
1.03
to
1.09
GHz
IGT1011S400 is a high power RF power transistor
IGT1011S150
150
Watts
1.03
to
1.09
GHz
IGT1011S150 is a high power, two-stage RF power transistor
IGT5259CW25
25
Watts
5.2
to
5.9
GHz
Fully-Matched GaN Transistor, 25W CW at 5.2-5.9 GHz
IGT2731M130
130
Watts
2.7
to
3.1
GHz
S-Band, GaN/SiC, 50-Ohm RF Power Transistor
ILT2731M130
130
Watts
2.7
to
3.1
GHz
50-Ohm Transistor for S-Band Radar Operating at 2.7-3.1 GHz
ILT2731M15
15
Watts
2.7
to
3.1
GHz
S-Band Radar Transistor Operating at 2.7-3.1 GHz
ILT2731M30
30
Watts
2.7
to
3.1
GHz
S-Band Radar Transistor Operating at 2.7-3.1 GHz
ILT3035M15
15
Watts
3
to
3.5
GHz
50-Ohm Transistor for S-Band Radar Operating at 3.0-3.5 GHz
ILT3035M30
30
Watts
3
to
3.5
GHz
Si-LDMOS Transistor for S-Band Radar Operating at 3.0-3.5 GHz
IGT3135M135
135
Watts
3.1
to
3.5
GHz
GaN Transistor for S-Band Radar Operating at 3.1-3.5 GHz
IGT5259CW50
50
Watts
5.2
to
5.9
GHz
C-Band, GaN/SiC, RF Power Transistor
IGT5459M25
25
Watts
5.4
to
5.9
GHz
GaN Transistor for C-Band Radar Operating at 5.4-5.9 GHz
IGT8292M50
50
Watts
8.2
to
9.2
GHz
X-Band Radar Transistor Operating at 8.2-9.2 GHz
IGT8994M50
50
Watts
8.9
to
9.4
GHz
X-Band, GaN/SiC, RF Power Transistor
