Fully-matched (50-Ohm), GaN-on-SiC and LDMOS RF Power Transistors for S-, C-, and X-band Radar Systems

One level up from our pre-matched transistors, Integra offers a suite of space-saving and easy-to-implement fully matched (50-ohm) transistors. These ultra-efficient transistors enable you to achieve SWaP-C objectives by getting more functional use out of the transistor spot in your high power amplifier's (HPA's) block diagram. These solid-state RF Power Transistors are currently designed for RF and microwave applications from 2.7 GHz to 12 GHz (S-band, C-band, X-band) and offer output power up to 135 W. They are designed with thermally-efficient metallized packages, and provide efficiencies up to 55%. They are the ideal RF Power Transistors for advance pulsed radar design applications.

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Model

Min Freq
(GHz)

Max Freq
(GHz)

Min Output 

Power (W)

Typical 
Gain

(dB)

Typical

Efficiency

(%)

Pulse Width

& Duty Factor

Voltage

(V)

Matching

Package

Compare

(Ohm)

IGT5259CW25

5.2

5.9

25

12

45

CW

36

50

PL44C2

IGT2731M130

2.7

3.1

130

16

62

300µs, 10%

50

50

PL44A1

ILT2731M130

2.7

3.1

130

12

43

300µs, 10%

32

50

P64H2

ILT2731M15

2.7

3.1

15

12

50

300µs, 10%

32

50

PL32A2

ILT2731M30

2.7

3.1

30

12

50

300µs, 10%

32

50

PL32A2

ILT3035M15

3

3.5

15

12

45

300µs, 10%

32

50

PL32A2

ILT3035M30

3

3.5

30

12

45

300µs, 10%

32

50

PL32A2

IGT3135M135

3.1

3.5

135

13.5

55

300µs, 10%

46

50

PL44A1

IGT5259CW50

5.2

5.9

50

13

50

CW

28

50

PL44C2

IGT5259L50

5.2

5.9

50

14

43

1ms, 15%

50

50

PL44A1

IGT5459M25

5.4

5.9

25

15

43

50µs, 10%

45

50

PL44A1

IGT8292M50

8.2

9.2

50

12

45

100µs, 10%

50

50

PFC77B1

IGT8994M50

8.9

9.4

50

12

43

200µs, 10%

50

50

PFC77B1

IGT9010M50

9

10

50

12

43

100µs Pulse Length, 10% Duty Cycle

50

50

PFC77B1

IGT5259CW25

25

Watts

5.2

to

5.9

GHz

Fully-Matched GaN Transistor, 25W CW at 5.2-5.9 GHz

IGT2731M130

130

Watts

2.7

to

3.1

GHz

S-Band, GaN/SiC, 50-Ohm RF Power Transistor

ILT2731M130

130

Watts

2.7

to

3.1

GHz

50-Ohm Transistor for S-Band Radar Operating at 2.7-3.1 GHz

ILT2731M15

15

Watts

2.7

to

3.1

GHz

S-Band Radar Transistor Operating at 2.7-3.1 GHz

ILT2731M30

30

Watts

2.7

to

3.1

GHz

S-Band Radar Transistor Operating at 2.7-3.1 GHz

ILT3035M15

15

Watts

3

to

3.5

GHz

50-Ohm Transistor for S-Band Radar Operating at 3.0-3.5 GHz

ILT3035M30

30

Watts

3

to

3.5

GHz

Si-LDMOS Transistor for S-Band Radar Operating at 3.0-3.5 GHz

IGT3135M135

135

Watts

3.1

to

3.5

GHz

GaN Transistor for S-Band Radar Operating at 3.1-3.5 GHz

IGT5259CW50

50

Watts

5.2

to

5.9

GHz

C-Band, GaN/SiC, RF Power Transistor

IGT5259L50

50

Watts

5.2

to

5.9

GHz

GaN Transistor for C-Band Radar Operating at 5.2-5.9 GHz

IGT5459M25

25

Watts

5.4

to

5.9

GHz

GaN Transistor for C-Band Radar Operating at 5.4-5.9 GHz

IGT8292M50

50

Watts

8.2

to

9.2

GHz

X-Band Radar Transistor Operating at 8.2-9.2 GHz

IGT8994M50

50

Watts

8.9

to

9.4

GHz

X-Band, GaN/SiC, RF Power Transistor

IGT9010M50

50

Watts

9

to

10

GHz

X-Band, GaN/SiC, RF Power Transistor