IGN1214M380C
L-Band Transistor Specified for Radar Applications at 380W
Min Freq (GHz) | Max Freq (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
1.2 | 1.4 | 380 | 20 | 54 | 150µs, 10% | 50 | Input | PL44C1 |
IGN1214M380C is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 1.2-1.4 GHz of operating frequency, minimum of 380W of peak pulse power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
GaN on SiC HEMT Technology
380W Output Power
Class AB Operation
Pre-matched Internal Impedance
100% High Power RF Tested
Negative Gate Voltage/Bias Sequencing
APPLICATION
L-Band Radar
EXPORT STATUS
EAR99
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