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Min. Frequency
Max. Frequency
Min. Output Power(w)
Typical Gain (dB)
2.7
3.1
200
16
Typical Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
55
300µs, 10%
44
Input & Output
IGN2731M200
Model | Min Frequency (GHz) | Max Frequency (GHz) | Min Output Power (W) | Typ Gain (dB) | Typ Efficiency (%) | Pulse Width & Duty Factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|---|
IGN2731M200 | 2.7 | 3.1 | 200 | 16 | 55 | 300µs, 10% | 44 | Input & Output | PL64A1 |
IGN2731M200 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7-3.1 GHz of operating frequency, a minimum of 200W of peak output power, 44V, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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