IGN2731M200

S-Band Radar Transistor Offering 200W

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.7
3.1
200
16
55
300µs, 10%
44
Input & Output
PL64A1
ign0160um12.jpeg

IGN2731M200 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7-3.1 GHz of operating frequency, a minimum of 200W of peak output power, 44V, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

GaN on SiC HEMT Technology

200W Output Power

Class AB Operation

Pre-matched Internal Impedance

100% High Power RF Tested

Negative Gate Voltage/Bias Sequencing

APPLICATION

S-Band Radar

EXPORT STATUS

EAR99