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IGN2731M200 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7-3.1 GHz of operating frequency, a minimum of 200W of peak output power, 44V, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
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