IGN2731M250

S-Band, GaN/SiC, RF Power Transistor

Min Freq (GHz)
Max Freq (GHz)
Min Output Power (W)
Typ Gain (dB)
Typ Efficiency (%)
Pulse Width & Duty Factor
Voltage (V)
Matching
Package
2.7
3.1
250
17.5
63
300µs, 10%
40
Input & Output
PL44C1
ign0160um12.jpeg

IGN2731M250 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies 250W of peak output power, with typically >17.5 dB of gain and 63% efficiency. It operates from a 40 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

GaN on SiC HEMT Technology

250W Output Power

Pre-matched Input and Output Impedances

High Efficiency - 63% typical

100% RF Tested Under 300ms, 10% duty cycle pulse conditions

RoHS and REACH Compliant

APPLICATION

S-Band Radar Systems

EXPORT STATUS

3A001