search integra
Integra

IB0607S10 Sub-1 GHz Transistor Operating at 12W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
0.6530.68710104920µs, 2%50NoneP32A5
IB0607S10

IB0607S10 is a high power pulsed avionics transistor designed for Sub-1 GHz avionics systems operating at 0.653 - 0.687 GHz. While operating in Class C mode under 20us pulse conditions at VCC= 50V, this common base device supplies a minimum of 12W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 12W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • Sub-1 GHz Technology

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Integra

Get our Updates:

Integra Technologies
© 1997 - 2018 Integra Technologies, Inc. All Rights Reserved
Get our Updates