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IB0607S1000 Sub-1 GHz Transistor Operating at 1000W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
0.6530.687100095520µs, 2%50InputP64A6
IB0607S1000

IB0607S1000 is a high power pulsed transistor designed for Sub-1 GHz avionics systems operating at 0.653 to 0.687 GHz. While operating in Class C mode under 20us pulse conditions at VCC=50V, this common base device supplies a minimum of 1000W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 1000W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • Sub-1 GHz Technology

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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