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IB0810M12 Bipolar L-Band Transistor Operating at 12W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
0.870.9912853300µs, 15%36NoneP44C3
IB0810M12

IB0810M12 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 0.870 - 0.990 GHz. While operating in Class C mode this common base device supplies a minimum of 12W of peak pulse power under the conditions of 300µs pulse width and 15% duty cycle. All devices are 100% screened for large signal RF parameters in a broadband RF test fixture with no external tuning.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 12W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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