IB0912M600 High Power L-Band Transistor Operating at 600W
| Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 0.96 | 1.215 | 600 | 9 | 53 | 10µs, 10% | 50 | Input & Output | P64A28 |
IB0912M600 is a high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. While operating in Class C mode under pulsing conditions of 10us/10% and VCC=50V, this common base device supplies a minimum of 600W of peak pulse power.This bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
FEATURES
- Silicon Bipolar
- Matched to 50-ohms
- 600W Output Power
- 100% High Power RF Tested
- Class C Operation
APPLICATIONS
- L-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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