|Pulse width &|
|1.03||1.03||15||15||67||48x (32µs On, 18µs Off), 6.4%||48||None||P32A5|
IB1011L15 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under mode S – ELM pulse burst conditions at VCC = 48V, this common base device supplies a minimum of 15W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.