|Pulse width &|
|1.03||1.03||660||11||57||128x (0.5µs On, 0.5µs Off), 1%||50||Input||P64A2|
IB1011M660 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under mode S pulse burst conditions at VCC = 50V, this common base device supplies a minimum of 660W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.