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IB1011M660 L-Band Avionics Transistor Operating at 660W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.031.036601157128x (0.5µs On, 0.5µs Off), 1%50InputP64A2
IB1011M660

IB1011M660 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under mode S pulse burst conditions at VCC = 50V, this common base device supplies a minimum of 660W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • 660W Output Power
  • Matched to 50-Ohms
  • 100% Device RF Screening
  • Class C Operation
  • Single Power Supply

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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