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IB1011S190 L-Band Avionics Transistor Operating at 190W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.031.03190127010µs, 1%60InputP32A5
IB1011S190

IB1011S190 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.03 - 1.09 GHz. While operating in Class C mode under 10µs, 1%, at VCC = 60V, this common base device supplies a minimum of 190W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • 190W Output Power
  • Matched to 50-Ohms
  • 100% Device RF Screening
  • Class C Operation
  • Single Power Supply

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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