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IB1011S350 L-Band Radar Transistor Operating at 350W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.031.03350125910µs, 1%50InputP32A5
IB1011S350

IB1011S350 is a high power pulsed transistor designed for L-band radar systems operating between 1.03 - 1.09 GHz. While operating in Class C mode this common base device supplies a minimum of 350W of peak pulse power under the conditions of 10µs pulse width, 1% duty cycle. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • 350W Output Power
  • Matched to 50-Ohms
  • 100% Device RF Screening
  • Class C Operation
  • Single Power Supply

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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