|Pulse width &|
|1.025||1.15||1100||10||50||10µs, 1%||60||Input & Output||P64A6|
IB1012S1100 is a high power pulsed avionics transistor designed for L-band avionics systems operating at 1.025 to 1.150 GHz. While operating in Class C mode under DME pulse conditions at VCC=60V, this common base device supplies a minimum of 1100W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.