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IB1012S500 High Power L-Band Transistor Operating at 1.025 - 1.150 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.0251.15500105410µs, 1%50Input & OutputP54A5
IB1012S500

IB1012S500 is a high power pulsed transistor device designed for systems operating over the instantaneous bandwidth of 1.025 - 1.150 GHz. While operating in Class C mode under DME pulsing conditions and VCC=50V, this common base device supplies a minimum of 500 W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 500W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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