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IB1214M130 High Power L-Band Transistor Supplying 130W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.201.40130954300µs, 10%50Input & OutputP32A5
IB1214M130

IB1214M130 is a high power pulsed transistor device designed for L-band radar systems operating over the instantaneous bandwidth of 1.21 - 1.40 GHz. While operating in Class C mode this common base device supplies a minimum of 130 W of peak pulse power under the conditions of 330us pulse width and 10% duty cycle, at Pin=20W. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 130W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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