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IB1214M6 High Power L-Band Transistor Supplying 6W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.201.406947100µs, 10%28InputP32C1
IB1214M6

IB1214M6 is a high power pulsed transistor device designed for L-Band radar systems operating over the instantaneous bandwidth of 1.20 - 1.40 GHz. While operating in Class C mode this common base device supplies a minimum of 6 W of peak pulse power under the conditions of 100us pulse width and 10% duty cycle, and Pin=0.8W. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 6W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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