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IB1416S650 High Power L-Band Transistor Supplying 600W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.451.5565084650x (0.5µs On, 1.5µs Off), 1%50Input & OutputP64A24
IB1416S650

IB1416S650 is a high power pulsed transistor designed for L-band avionics systems operating at 1.45 to 1.55 GHz. While operating in Class C mode under 8us, 1%, pulse conditions at VCC= 50V, this common base device supplies a minimum of 600 W of peak pulse power. This bipolar transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 600W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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