search integra
Integra

IB2226MH160 High Power S-Band Transistor Supplying 160W at 2.25-2.55 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
2.252.55160946200µs, 10%34Input & OutputP44C4
IB2226MH160

IB226MH160 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 2.25 - 2.55 GHz. While operating in Class C mode this common base device supplies a minimum of 160 W of peak pulse power under the conditions of 200us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression. This device is rated for a peak output power level of PPEAK = 160W @ 10% duty factor. This corresponds to an average power PAVG = 16W.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 160W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Integra

Get our Updates:

Integra Technologies
© 1997 - 2018 Integra Technologies, Inc. All Rights Reserved
Get our Updates