|Pulse width &|
|2.70||2.90||170||10||50||100µs, 10%||36||Input & Output||P32A5|
IB2729M170 is a high power pulsed transistor designed for S-band ATC radar systems operating over the instantaneous bandwidth of 2.7 - 2.9 GHz. While operating in Class C mode this common base device supplies a minimum of 170 W of peak pulse power under the conditions of 100µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.