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IB2729M25 High Power S-Band Transistor Supplying 25W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
2.702.9025945100µs, 10%36Input & OutputP32C1
IB2729M25

IB2729M25 is a high power pulsed transistor designed for S-band ATC radar systems operating over the instantaneous bandwidth of 2.7 - 2.9 GHz. While operating in Class C mode this common base device supplies a minimum of 25 W of peak pulse power under the conditions of 100us pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 25W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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