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IB2856S250 High Power ISM/Medical Transistor Operating at 250W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
2.8562.856250115212µs, 3%40Input & OutputP32A5
IB2856S250

IB2856S250 is a high power pulsed transistor designed to operate in Class C mode in ISM/Medical systems. This common base device supplies a minimum of 250W of peak pulse power under the conditions of 12µs pulse width and 3% duty cycle. Excellent spectral stability into output mismatch over a broad input power range make it ideal for use in reliable high power solid state amplifiers. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • ISM/Medical
  • 250W Output Power
  • Matched to 50-ohms
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • S-Band Technology

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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