search integra
Integra

IB3134M70 High Power S-Band Transistor Supplying 70W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
3.103.4070850300µs, 10%36Input & OutputP32A5
IB3134M70

IB3134M70 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 3.1 - 3.4 GHz. While operating in Class C mode this common base device supplies a minimum of 70 W of peak pulse power under the conditions of 300µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 70W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Integra

Get our Updates:

Integra Technologies
© 1997 - 2018 Integra Technologies, Inc. All Rights Reserved
Get our Updates