IB3134M70 High Power S-Band Transistor Supplying 70W
| Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 3.10 | 3.40 | 70 | 8 | 50 | 300µs, 10% | 36 | Input & Output | P32A5 |
IB3134M70 is a high power pulsed transistor designed for S-band radar systems operating over the instantaneous bandwidth of 3.1 - 3.4 GHz. While operating in Class C mode this common base device supplies a minimum of 70 W of peak pulse power under the conditions of 300µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.
FEATURES
- Silicon Bipolar
- Matched to 50-ohms
- 70W Output Power
- 100% High Power RF Tested
- Class C Operation
APPLICATIONS
- S-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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