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IDM165L650 High Power VDMOS Transistor Operating at 650W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
0.1250.1676509621ms, 20%34NoneP44I1
IDM165L650

IDM165L650 is a high power pulsed transistor designed for Sub-1 GHz systems operating at 0.125 - 0.167 GHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650W of peak pulse power at a fixed input power of 80W across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

FEATURES

  • Silicon VDMOS
  • Matched to 50-ohms
  • 650W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • Sub-1 GHz Technology

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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