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IDM30512CW100 High Power VDMOS Transistor Operating at 100W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
0.030.512100965CW28NoneP44I1
IDM30512CW100

IDM30512CW100 is a high power transistor designed for Sub-1 GHz systems operating over the frequency band 0.03 - 0.512 GHz under CW conditions. This dual MOSFET device is capable of supplying a minimum of 100W of output power. All devices are 100% screened in a narrowband RF test fixture.

FEATURES

  • Silicon VDMOS
  • Matched to 50-ohms
  • 100W Output Power
  • 100% High Power RF Tested
  • CW Conditions

APPLICATIONS

  • Sub-1 GHz Technology

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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