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IDM500CW300 High Power VDMOS Transistor Operating at 300W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
0.0010.50300965CW28NoneP44I1
IDM500CW300

IDM500CW300 is a high power transistor designed for Sub-1 GHz systems operating at 0.001 - 0.5 GHz. Operating at CW conditions, this dual MOSFET device supplies a minimum of 300W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon VDMOS
  • Matched to 50-ohms
  • 300W Output Power
  • 100% High Power RF Tested
  • CW Conditions

APPLICATIONS

  • Sub-1 GHz Technology

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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