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IGN0110UM100 High Power Broadband Transistor Offering 100W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
0.101.001001355CW28NonePL22D1
IGN0110UM100

IGN0110UM100 is a high power GaN transistor, designed for Broadband applications. This transistor operates over the 0.10  – 1.00 GHz instantaneous frequency band. It supplies a minimum of 100 W of output power with 12 dB gain. Specified operation is with Class AB bias. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 100W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • Broadband

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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