|Pulse width & Duty factor||Voltage|
IGN0110UM100 is a high power GaN transistor, designed for Broadband applications. This transistor operates over the 0.10 – 1.00 GHz instantaneous frequency band. It supplies a minimum of 100 W of output power with 12 dB gain. Specified operation is with Class AB bias. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.