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IGN0160UM12 High Power Broadband GaN Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
0.106.00121756CW50NonePL21A1
IGN0160UM12

IGN0160UM12 is a high power GaN transistor, designed for Broadband applications. This transistor operates over the 100MHz – 6GHz instantaneous frequency band. It supplies a minimum of 12W of output power with 17dB gain. Specified operation is Class AB. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 12W Output Power
  • Unmatched
  • 100% High Power RF Tested
  • Class AB Opperation
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • Broadband

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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