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IGN0912L45 High Power L-Band Radar Transistor Operating at 0.96-1.22 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
0.961.215452157444x (7µs On, 6µs Off), 22.7%50InputPL32A2
IGN0912L45

IGN0912L45 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, this transistor offers 0.96-1.22 GHz of operating frequency, minimum of 45W of peak pulse power, 28V and 22.7% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 45W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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