|Pulse width & Duty factor||Voltage|
|1.025||1.15||40||21||60||48x (32µs On, 18µs Off), 6.4%||50||Input||PL32A2|
IGN1012L40 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.025-1.150 GHz of operating frequency, minimum of 40W of peak pulse power, 50V and 6.4% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.