search integra
Integra

IGN1030M40 High Power GaN RF Transistor for Avionics Operating at 1.03 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
1.031.03402265300µs, 10%50InputPL32A2
IGN1030M40

IGN1030M40 is a high power GaN transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.03 GHz of instantaneous operating frequency, 300us pulse width and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 40W Output Power
  • Includes Depletion Mode
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Class AB Operation
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Integra

Get our Updates:

Integra Technologies
© 1997 - 2018 Integra Technologies, Inc. All Rights Reserved
Get our Updates