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IGN1030M800 High Power GaN RF Transistor for Avionics Operating at 1.03 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
1.031.038001760128µs, 2%50InputPL84A1
IGN1030M800

IGN1030M800 is a high power GaN RF transistor best suited for L-band avionic applications. Specified for use under Class AB operation, this transistor offers 1.03 GHz of operating frequency, 128us and 2% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 800W Output Power
  • Includes Depletion Mode
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Class AB Operation
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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