|Pulse width & Duty factor||Voltage|
IGN1315M650 is a high power GaN transistor best suited for L-band radar applications. Specified for use under Class AB operation, 1.30-1.45 GHz of operating frequency, minimum of 650W of peak pulse power, 60V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.