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IGN2729M250C S-Band Radar Transistor Offers 250W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
2.702.902501159300µs, 10%50Input & OutputPL64A1
IGN2729M250C

IGN2729M250C is a high power S-band transistor, best suited for S-band radar applications. Specificed for use under Class AB operation, this transistor offers 2.7 – 2.9 GHz of operating frequency, minimum of 250W of peak output power, and 10% duty cycle. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 250W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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