|Pulse width & Duty factor||Voltage|
|2.70||2.90||400||11||58||300µs, 10%||50||Input & Output||PL64A1|
IGN2729M400 is high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operating, this transistor offers 2.7 – 2.9 GHz of operating frequency, a minimum of 400W of peak output power, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.