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IGN2998S500 High Power GaN Transistor Operating at 2.998 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
2.9982.99850012558µs, 1%50Input & OutputPL64A1
IGN2998S500

IGN2998S500 is a high power GaN transistor, specified for use under Class AB operation. This transistor offers 2.998 GHz of operating frequency, minimum of 500W of peak pulse power, 50V and 1% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 500W Output Power of 500W
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • S-Band

EXPORT STATUS

  • 3A001


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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