|Pulse width & Duty factor||Voltage|
|2.998||2.998||500||12||55||8µs, 1%||50||Input & Output||PL64A1|
IGN2998S500 is a high power GaN transistor, specified for use under Class AB operation. This transistor offers 2.998 GHz of operating frequency, minimum of 500W of peak pulse power, 50V and 1% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.