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IGN3842M130 C-Band Radar Transistor Operating at 3.8-4.2 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
3.804.201301457100µs, 2%50Input & OutputPL32A1
IGN3842M130

IGN3842M130 is a high power GaN transistor, best suited for C-band radar applications. Specified for use under Class AB operation, this transistor operates at 3.8-4.2 GHz of operating frequency, a minimum of 130W of peak output power, 50V, and 2% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 130W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • C-Band Radar

EXPORT STATUS

  • 3A001


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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