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IGN450M160 High Power Radar Transistor Operating at 4.2-4.5 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
0.420.451602277100µs, 10%50InputPL44C1
IGN450M160

IGN450M160 is a high power GaN transistor best suited for sub-1 GHz Radar applications. Specified for use under Class AB operation, this transistor offers 4.2-4.5 GHz of operating frequency, minimum of 160W of peak pulse power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 160W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • Sub-1 GHz Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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