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IGNP2729M800 S-Band Radar Module Operating at 2.7-2.9 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
( Duty factor)
Voltage
(V)
Size
2.702.908001158300µs, 10%502.8 x 2.7 x 0.22 inch
IGNP2729M800

IGNP2729M800 is a 50-Ohm GaN based high power pulsed module for S-band radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. This module supplies a minimum of 800W of peak pulse power under the conditions of 300µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters.

FEATURES

  • GaN-on-SiC
  • 800W Output Power
  • Fully-matched to 50 Ohms
  • 100% High Power RF Tested
  • Class AB Operation
  • High Efficiency
  • Bias Sequencing required

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • TBD


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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