|Pulse width &|
IGT1112M90 is a high power GaN transistor, best suited for X-band radar applications. Specified for use under Class AB operating, this transistor operates at 11.0-12.0 GHz of operating frequency, a minimum of 90W of peak output power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.