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IGT1112M90 X-Band Radar Transistor Operating at 11.0-12.0 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
Matching: OhmPackage
10.8 11.8 90 11 43 150µs, 10%5050PFC77B1
IGT1112M90

IGT1112M90 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of X-Band Radar Systems. It operates over the full bandwidth of 10.8-11.8 GHz. Under 150µs, 10% duty cycle pulse conditions, it supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >90 W
  • Fully matched to 50 Ω Impedance at both Input and Output
  • High Efficiency - up to 43%
  • 100% RF Tested
  • RoHS and REACH Compliant

APPLICATIONS

  • X-band Radar Systems

EXPORT STATUS

  • 3A001


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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