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IGT1112M90 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of X-Band Radar Systems. It operates over the full bandwidth of 10.8-11.8 GHz. Under 150µs, 10% duty cycle pulse conditions, it supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.