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IGT3135M115 GaN Transistor for S-Band Radar Operating at 3.1-3.5 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
Matching: OhmPackage
3.103.501151150300µs, 10%4050PL44A1
IGT3135M115

IGT3135M135 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 3.1-3.5 GHz of operating frequency, a minimum of 115W of peak output power, 300µs pulse width, 40V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 115W Output Power
  • Fully-matched Internal Impedance
  • 100% High Power RF Tested
  • Class AB Operation
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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