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IGT9010M50 X-Band Radar Transistor Operating at 9.0-10.0 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
Matching: OhmPackage
9.0010.00501037100µs, 10%5050PFC77A1
IGT9010M50

IGT9010M50 is a high power GaN transistor, best suited for X-band radar applications. Specified for use under Class AB operating, this transistor operates at 9.0-10.0 GHz of operating frequency, a minimum of 50W of peak output power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 50W Output Power
  • Fully-matched Internal Impedance
  • 100% High Power RF Tested
  • Class AB Operation
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • X-Band Radar

EXPORT STATUS

  • 3A001


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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