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ILD0912M60 LDMOS Transistor Operating at 60W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
0.961.21560174810µs, 10%30Input & OutputPL44B1
ILD0912M60

ILD0912M60 is a high power LDMOS transistor designed for the frequency band 0.960 - 1.215 GHz. Operating at 10us/10% pulse conditions this LDMOS FET device supplies a minimum of 60 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 60W Output Power
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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