search integra
Integra

ILD1011L200HV High Power L-Band Transistor Supplying 200W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.031.09200175548x (32µs On, 18µs Off), 6.4%50InputPL64A1
ILD1011L200HV

ILD1011L200HV is a high power LDMOS transistor designed for avionics systems operating at 1.03 - 1.09 GHz at ELM Mode S, 6.4% pulse conditions and 50V drain bias. This LDMOS FET device supplies a minimum of 200 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 200W Output Power
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Integra

Get our Updates:



Privacy Policy


Integra Technologies
© 1997 - 2018 Integra Technologies, Inc. All Rights Reserved
Get our Updates