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ILD1011M1000HVE LDMOS Transistor For L-Band Avionics Operating at 1000W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.031.031000185550µs, 2%50InputPL124A1
ILD1011M1000HVE

ILD1011M1000HVE is a high power LDMOS transistor, designed for L-band avionics systems, operating at 1.03 GHz. While operating in Class AB mode under 50us, 2%, at VCC = 50V, this device supplies a minimum of 1000W of peak pulse power. This transistor utilizes a gold metallization system to achieve maximum reliability and is 100% screened for large signal RF parameters.

FEATURES

  • Silicon LDMOS Technology
  • 1000W Output power
  • Pre-Matched Device
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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