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ILD1011M280HV High Power LDMOS Transistor Operating at 280W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.031.03280165150µs, 2%50InputPL84A1
ILD1011M280HV

ILD1011M280HV is a high power LDMOS transistor, designed for avionics systems operating at 1.03 - 1.09 GHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 280W of power and is 100% screened for large signal RF parameters.

FEATURES

  • Silicon LDMOS Technology
  • 280W Output Power
  • Pre-Matched Device
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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