|Pulse width &|
|1.20||1.40||200||12||42||16ms, 50%||30||Input & Output||PL124A1|
ILD1214EL200 is a high power pulsed transistor designed for L-band systems operating at 1.215 – 1.400 GHz. Operating at a pulse width of 5ms with a duty factor of 20%, this dual LDMOS device supplies a minimum of 200W of peak pulse power across the instantaneous operating bandwidth. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters.