ILD1214EL200 High Power L-Band Transistor Supplying 200W
| Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.20 | 1.40 | 200 | 12 | 42 | 16ms, 50% | 30 | Input & Output | PL124A1 |
ILD1214EL200 is a high power pulsed LDMOS transistor designed for L-band systems operating at 1.215 – 1.400 GHz. Operating at a pulse width of 5ms with a duty factor of 20%, this dual LDMOS device supplies a minimum of 200W of peak pulse power across the instantaneous operating bandwidth. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters.
FEATURES
- Silicon LDMOS
- Matched to 50-ohms
- 200W Output Power
- 100% High Power RF Tested
- Class AB Operation
APPLICATIONS
- L-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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